제11장 총정리

11-1. ADVANCED NMOS Si GATE FABRICATION

11-2. Advanced Bipolar IC Fabrication

#11 and #12 2nd level metal an contacts between metal1 and metal2. See photo on page 16

11-3. CONCLUSIONS

1. Advanced MOS and bipolar processes both require approx 9-12 mask levels

2. Both MOS and biploar structures rely heavily on ion implantation and local oxidation

3. Both MOS and bipolar devices require tight process control to achieve reproducible characteristics

4. 2D process and device models are crucial for accurately predicting small geometry device structures and I-V characteristics

5. "single" models of oxidation, diffusion, ion implantation etc are inadequate for small structures

[eqn: therefore] need to look at more accurate, physical models for IC fabrication processes.